Schottky contacts formed by Al/Si1-xGex and Pd/Si1-xGex, with x=0.17 and 0.20, have been investigated by using current-voltage-temperature analysis. The Schottky barrier height varied with Al and Pd as the Schottky metal. The current transport mechanism was strongly affected by 550 degrees C annealing. In as-deposited samples, thermionic emission and field emission combined as the conduction mechanism. After 550 degrees C annealing, thermionic emission is the dominant mechanism. The barrier height, phi(B), was also found to decrease with the increase of germanium composition for the two used samples. X-ray diffraction was utilized to study the substrate crystal quality versus processing. The variation of surface crystal structure and stress with processing temperature was observed.