화학공학소재연구정보센터
Journal of Vacuum Science & Technology A, Vol.15, No.5, 2478-2484, 1997
Effect of Plasma and Thermal Annealing on Chemical-Vapor-Deposition Dielectrics Grown Using SiH4-H2O2 Gas-Mixtures
Silicon dioxide has been deposited at low pressure (1 Torr) and low substrate temperature (0 degrees C) by chemical vapor deposition (CVD) using SiH4 and hydrogen peroxide (H2O2) concentrated at 30% or 60%. The effect of solution concentration on film properties has been investigated : characterization of the deposited films has been carried out by ex situ Fourier transform infrared spectroscopy, ellipsometry, and mechanical stress measurements. For shallow trench isolation applications, the physical and electrical properties of the CVD oxide must be close to those of a thermal oxide. Such properties can be obtained by in situ annealing.