A high energy aluminum ion implantation using a variable energy radio frequency quadrupole (RFQ) implanter has been studied for the fabrication of high power semiconductor devices, The implanter consists of a microwave ion source with a crucible for AlCl3 sublimation, a sector type mass separator, a magnetic quadrupole triplet, a variable energy four-rod RFQ linac as an additional accelerator, an energy analyzer, and an implantation chamber. Al2+ ions, with energies of 1.0 MeV and 0.9 MeV, are implanted into a 6-inch diameter wafer, and the depth profile and dose uniformity are measured by secondary ion mass spectroscopy and sheet resistivity, respectively. Results show that the depth profile has the desired features for the projected range, and the dose non-uniformity is 0.7%.