P-type transparent conducting oxide films consisting of a new multicomponent oxide composed of In2O3 and Ag2O have been prepared by rf magnetron sputtering. After postannealing at a temperature of 500 degrees C in air, In2O3-Ag2O thin films prepared using In2O3-Ag2O targets with Ag2O contents of 40-60 wt % exhibited p-type conduction. A resistivity of 10(-1)-10(-3) Ohm cm and an average transmittance above 20% in the visible range were obtained in the p-type amorphous In2O3-Ag2O films. A resistivity of 8.8x10(-3) Ohm cm, Hall mobility of 17 cm(2)/Vs and hole concentration of 4.2x10(19) cm(-3) were obtained in a film prepared with an Ag2O content of 50 wt %.