SiC thin films have been grown on Si(100) and 6H SiC substrates using a dual pulsed supersonic molecular beam system. Silane and hydrocarbon precursors were seeded in helium and hydrogen molecular beams to increase the translational kinetic energy of the arriving reactants. Energies between 2 and 4.8 eV were used for single source growth, the hydrocarbon and silane source energy ranged from 0.3 to 1.8 eV. High quality, single polytype homoepitaxial films were grown on 6H SiC at 1530 K; SiC films were grown on Si(100) substrates at 1400 K. Generally, better morphology and growth rate (0.8 mu m/h) was achieved with silane and hydrocarbon source material seeded in a hydrogen carrier gas rather than a He carrier gas. Pulsed seeded supersonic molecular beam grown SiC was imaged using 5 and 10 eV photons in a photoelectron emission microscope. Contrast effects that could potentially be used to determine film quality were observed.