This article gives an overview of fabrication and performance of a class of vacuum microelectronic devices, namely, silicon tip-on-post field emitter arrays (FEAs). Experimental data illustrating the device performance are presented in the context of requirements for field emission flat panel display and microwave power amplifier applications. Critical geometrical parameters of the device are discussed, and a fabrication process flow designed to optimize these parameters is described. Equipment and methods for testing electrical performance of the FEAs and results thus generated are presented. Specifically, emission current versus gate voltage characteristics for arrays with tips formed using anisotropic (crystallographic-orientation-dependent) or isotropic etching techniques, uniformity of these characteristics across a 4 in. diameter substrate, stability of emission current in ultrahigh vacuum conditions, and changes in emission current upon exposure to active gases at varying pressure are discussed.