This paper describes the simulation study for the optimization of high-performance cadmium telluride (CdTe) solar cells using different doping concentrations, carrier lifetimes, temperature, and thickness of layers of CdTe absorber and CdS window layers. In this simulation, the highest efficiencies of similar to 18% and similar to 18.29% achieved when the doping concentrations were 1.5 x 10(17) cm(-3) for absorber layer and 1 x 10(15) cm(-3) for window layer, respectively. The efficiency of the solar cell increases with increase in carrier lifetime and the highest efficiency of 18.26% achieved at carrier lifetime 100 mu s with doping concentration of 1 x 1017 cm(-3). Solar cell with the thickness of absorber layer 8 mu m at carrier lifetime 100 mu s attained the maximum efficiency of 19.18% whereas the efficiency of 18.33% was noticed in thickness of window layer 70 nm at 100 mu s carrier lifetime. The optimum efficiency of 18.3% with short-circuit current 2.66 A and open-circuit voltage 0.79 V of solar cell has been achieved at operating temperature 25 degrees C. The optimized energy band gap of absorber (1.7 eV) accomplished the highest efficiency of 18.31%. The photogeneration rate increases logarithmically as distance from front increases, while the recombination rate increases linearly, which could be suitable for fabrication of efficient solar cell.