The behavior of fractal crystallization in a Pd/Ge thin film system of various ratios of thickness (or composition) after annealing has been investigated by transmission electron microscope. It is difficult for coevaporated Pd-Ge films to obtain fractal crystallization. The fractal structure in Pd/a-Ge bilayer films can form more easily than in a-Ge/Pd bilayer films. The fractal crystallization was restricted because of the formation of the compounds (Pd2Ge and PdGe) in the Pd/Ge thin film system. Growth of the fractal structure depends on the competition between the two processes of amorphous germanium (a-Ge) crystallization and compound formation. Fractal formation can be explained by a random successive nucleation model.