Standardized testing of commercial photovoltaic modules is widely used around the world and reduces risks of module failures. Such testing also reduces financial risks for module manufacturers and customers. This work examines the expected impact of certain defects in silicon (Si) modules during standardized accelerated testing. Specifically, the behavior of boron-oxygen (BO) light-induced degradation (LID) and lightand elevated temperature-induced degradation (LeTID) are simulated during some of the stress tests in IEC 61215. LID and LeTID reaction rates at qualification temperatures are estimated from earlier published data. It is demonstrated the BO-related LID may cause some false positives and false negatives when IEC 61215 tests are performed as prescribed in the 2016 published version. Possible stabilization steps to avoid these false results are suggested. State changes for the defects causing LeTID occur much more slowly than those causing BO LID, and therefore LeTID is predicted to have a lesser impact on the IEC 61215 stress tests results.