화학공학소재연구정보센터
Journal of Vacuum Science & Technology A, Vol.17, No.5, 2535-2541, 1999
Optimization of hardness by the control of microwave power in TiN thin film deposited by electron cyclotron resonance assisted sputtering in a nitrogen plasma
Research has been conducted to investigate ways to make thinner, yet more cohesive TiN films. Plasma vapor deposition techniques were used in conjunction with electron cyclotron resonance to deposit TiN films on substrates of Inconel 718 (nickel-based superalloy). Previous parts of this investigation have focused on the relationship between process (i.e.,film deposition) parameters, film microstructure, and film mechanical properties. The final part of this study extends the research focus to discuss what effect a change in the power setting of the microwave plasma has on the resulting Meyer hardness of the TiN-coated sample. The crystal orientation and texture of these films are also discussed. Optimum hardness of greater than 46 GPa was found at low microwave power of 200 W and a substrate bias of - 100 V. Lowering microwave power to 200 W more than doubled the number of (111)-oriented grains. Substrate bias of -100 V or greater resulted in a greater than twofold decrease in (200)-oriented grains.