Close-spaced vapor transport combined with free evaporation was used for the growth of polycrystalline CdInTe films on glass substrates. The optoelectronic properties of the films were investigated by absorption at 77 and 300 K, and photoluminescence at 77 K with the indium concentration ranged from 0 to 22 at. %. The band-gap energy was found to vary linearly, and the band-gap temperature coefficient increases as the indium concentration increases, It was found that the ionization energy of indium displaced from the cationic sites of the CdTe lattice corresponds to a donor level at E-D>32 meV (E(D)similar or equal to 36 meV) below the conduction-band bottom. This level and the acceptor level associated with Cd vacancies stay at the same energy distance of their corresponding bands for all the indium concentrations studied. The relation between E-g and the lattice parameter is also shown.