GaAs(111)-B (arsenic terminated) surfaces prepared by rinsing with running deoxygenated and de-ionized water (DODIW) were investigated by scanning tunneling microscopy in ultrahigh vacuum. After annealing the sample, As-rich 2 X 2 reconstruction was found between 415 and 500-degrees-C. Above 500-degrees-C, Ga-rich square-root 19 X square-root 19-like structures were also found around As desorbed triangular valleys. Although details of the reconstructions were slightly different from molecular-beam epitaxially grown surfaces, similar temperature dependence proved that DODIW-treated surfaces were effectively passivated against oxidation.