Phase-shift masks were prepared using sputter deposited films for the phase-shift layer and etch stop layer on fused quartz silica substrates. It has been found that the combination Of SiO2 for the phase-shift layer and HfO2 for the etch-stop layer offers a unique combination of properties advantageous for the preparation of phase-shift masks. The optical transmission properties of HfO2 layers with or without a SiO2 phase-shifting layer on quartz substrates are presented.