In this work, the accuracy with which patterns can be delineated in electron-beam lithography has been characterized in terms of the range of the electrons relative to the pattern size being produced. In addition, the interdependence of the minimum feature size, film thickness, and beam energy have been investigated for low-beam energy exposures. Palladium acetate has been used as a model resist, and beam energies ranging from 1 to 30 keV have been used for exposures. The results indicate that the proximity effect can be eliminated by reducing the range of the electrons below the minimum feature width and that the thickness of the imaging layer must be less than 2/3 of the electron range for adequate exposure. The loss of resolution due to increased probe size at low beam energies has also been investigated.