화학공학소재연구정보센터
Journal of Vacuum Science & Technology B, Vol.11, No.6, 2420-2426, 1993
New Characterization Method of Ion Current-Density Profile Based on Damage Distribution of Ga+ Focused-Ion Beam Implantation in GaAs
A new method is reported for characterizing focused ion probe current distributions based on the comparison between damage simulations and transmission electron microscopy observations. Several focused-ion beam operation conditions were modeled, such as low-to-high source emission currents and variable beam acceptances. At low current and small acceptance, the ion spot exhibits a nearly Gaussian profile, otherwise larger tails are evidenced which can be modeled either by Pearson or "bi-Gaussian" distributions. The sensitivity of the procedure to the tail extension is highlighted.