Theoretical and experimental investigations of methods to obtain T- and GAMMA-shaped sub-100 nm gates using electron-beam lithography, multilayer resist schemes and lift-off are reported. A resist profile simulation tool, based on Monte Carlo electron scattering calculation and an adaptive string algorithm, is combined with an experimentally determined solubility database for various resist/developer pairs. This provides a very accurate description of the profile formation process for arbitrary resist/substrate stacks and excellent agreement between simulated and experimental resist profiles is achieved. Limitations due to forward scattering and the influence of development conditions are discussed. Using optimized exposure and development parameters, sub-100 nm T and GAMMA gates with very low end-to-end resistances can be fabricated without sacrificing process latitudes.