A self-aligned fabrication process is presented for making surface-emitting high-power AlGaAs/GaAs GRIN-SCH-SQW semiconductor laser sources designed to produce > 1 W optical output at the nominal GaAs wavelength of 830 nm. The process uses double-layer masking with photoresist masks used as repeatedly changed selector masks on top of a semimetallic amorphous carbon (SMAC) mask which is an unchanging master mask on top of the AlGaAs/GaAs. The SMAC master mask, defined in one photolithography step, thus assuring the self-alignment, contains all the edges to be etched at all the different angle/depth specifications. Four separate Cl2+/Cl2 chemically assisted ion beam etches of AlGaAs/GaAs at three different angle/depth specifications create the three-dimensional microstructures of vertical ridges, back-to-back external 45-degrees reflectors, and vertical laser facets with current deflection trenches, in large arrays. Final encapsulation is by plasma-enhanced chemical-vapor-deposited (PECVD) amorphous silicon-rich nitro-oxide hydrogenated (a-Si(w)N(y)O(z):H), thin film having triple use as chemical passivation, optical antireflection coating, and electrical insulation. We propose that PECVD amorphous silicon-rich carbo-nitro-oxide hydrogenated (a-Si(w)C(x)N(y)O(z):H), thin film might be an improved triple-use encapsulation thin film.