Long range components of a proximity function in electron-beam lithography are of great importance when high accelerating voltage (V approximately 50 kV or higher) is used. An additional exposure, provided by long-range backscattered electrons, can strongly affect linewidth in a nanometer scale lithography. Proximity correction procedures require proximity functions in an analytical or tabular form. The proximity function can be estimated with a certain degree of accuracy using a Monte Carlo simulation of electron scattering in a given set of layers and materials. In the present work, two rather inexpensive and fast methods of experimental long-range proximity function evaluation are suggested. Comparison of their output and Monte Carlo data produced using standard scattering calculation algorithms has been made. Results obtained show that these methods can be useful for rapid and almost effortless experimental proximity function determination. First of the reported methods makes it possible to obtain quantitative data on the backscattered exposure that is especially useful for the Monte Carlo algorithms verification.