In order to obtain finer feature sizes on x-ray masks, it is required to select the x-ray absorber material, while refining the pattern definition technique. WN(x) deposited under suitable conditions is completely structureless. Its density is close to that of W. Therefore, it is promising as an x-ray absorbing material. Patterning was tried in 500 nm thick WN(x) using focused ion beam and low temperature electron cyclotron resonance plasma etching, which resulted in a 60 nm pattern with a smooth side wall.