In recent years, the plasma source ion implantation (PSII) technique has been developed in China. It is called all orientation ion implantation. Experimental devices have been built in Harbin Institute of Technology, Southwestern Institute of Physics, Dalian University of Technology, Sichuan University, and China Textile University, respectively. In this article, two typical devices are described, preliminary results of the PSII-ion beam enhanced deposition and production of diamondlike carbon films, and some computer simulation programs are reported briefly. Some experiments show that addition of rare-earth metal ions, or heavy metal ions, or Xe+, Kr+ in the nitrogen plasma may make the effectiveness of the surface modification better. Future considerations are also described in the article.