Structural and optical properties of strained (In,Ga)As/GaAs heterostructures grown on (110) GaAs substrates intentionally misoriented by 6-degrees toward the (111)B surface have been investigated. Photoluminescence and double-crystal x-ray diffraction data show that high-quality (In,Ga)As/GaAs quantum wells can be grown on the (110) vicinal surface.