Carbon-doped GaAs films have been grown by molecular-beam epitaxy using carbon tetrabromide as the carbon source. The films were doped up to 1,3 x 10(20) cm-3 with mobilities which compare favorably to beryllium-doped films. Secondary-ion mass spectrometry measurements made on these films indicate sharp transitions and negligible memory effects as well as near unity doping incorporation. Room temperature photoluminescence intensities were equivalent to comparably beryllium-doped films at 5.0 X 10(19) cm-3. Photoluminescence intensities and hole concentrations were found to be dependent on both arsenic to gallium flux ratios and substrate temperature. Annealing studies on a film doped with carbon at 4.6 x 10(19) cm-3 indicate good thermal stability of the carbon in the arsenic lattice site.