Electron beam lithography has been used to investigate the growth of GaAs wires in finely corrugated GaAs. Electron beam lithography was used to define 100 nm corrugations along the [110] and [110BAR] directions; anisotropic etching revealed grooves that were V-shaped ([110BAR]) or dovetailed ([110]). Here, AlAs resharpens the groove profile during growth, provided the barrier thickness is not less than 30-40 nm. Also’ GaAs exhibited an enhanced growth rate in both groove directions, with an increase-of 60% over the nonpatterned growth rate for the [110BAR] direction. Growth in grooves along [110BAR] preserved the V shape of the groove, while [110] growth showed evidence of deposition masking and microvoiding.