A series of conventional and novel (AlGa)As/GaAs two-dimensional hole gas (2DHG) structures have been grown on (001) oriented surfaces. The samples were grown following an identical growth regime so as to render them comparable. The effects of variation in spacer layer width, growth interruption at the (AlGa)As/GaAs interface, variation in continuous and delta-doped beryllium density and of the subsequent contacting procedures, together with the use of As2 instead of As4 during growth, have been studied. The results are compared with theoretical analysis and an improved procedure for producing and contacting high mobility 2DHGs is described.