Journal of Vacuum Science & Technology B, Vol.12, No.6, 3214-3217, 1994
Effects of Sulfur Passivation and Rapid Thermal Annealing on the Electrical-Properties of InP Metal-Insulator-Semiconductor Schottky Diodes
Keywords:BARRIER HEIGHT;ELECTRONIC-PROPERTIES;PHOSPHINE-PLASMA;GAAS-SURFACES;JUNCTIONS;CONTACTS;LAYER;SE;OXIDE