Previous Article Next Article Table of Contents Journal of Vacuum Science & Technology B, Vol.12, No.6, 3332-3336, 1994 DOI10.1116/1.587622 Export Citation Process Technology for InGaAs/InAlAs Modulation-Doped Field-Effect Transistors on InP Substrates Fink T, Raynor B, Haupt M, Kohler K, Braunstein J, Grun N, Hornung J Keywords:GATE-RECESS;ION;PLASMA Please enable JavaScript to view the comments powered by Disqus.
