Previous Article Next Article Table of Contents Journal of Vacuum Science & Technology B, Vol.13, No.2, 253-257, 1995 DOI10.1116/1.588360 Export Citation In-Situ Monitoring of GaAs Etched with a Cl-2/Ar Discharge in an Electron-Cyclotron-Resonance Source Kahaian DJ, Thomas S, Pang SW Keywords:SEMICONDUCTORS;MECHANISMS;MIXTURES;PLASMAS;OXYGEN;CL2 Please enable JavaScript to view the comments powered by Disqus.