Journal of Vacuum Science & Technology B, Vol.13, No.2, 258-267, 1995
Real-Time in-Situ Monitoring of Surfaces During Glow-Discharge Processing - NH3 and H-2 Plasma Passivation of GaAs
Keywords:HETEROJUNCTION BIPOLAR-TRANSISTORS;UNIFIED DEFECT MODEL;INFRARED-SPECTROSCOPY;HYDROGEN PLASMA;GALLIUM-ARSENIDE;SCHOTTKY DIODES;HF TREATMENT;INTERFACE;OXIDE;SILICON