Previous Article Next Article Table of Contents Journal of Vacuum Science & Technology B, Vol.13, No.2, 273-275, 1995 DOI10.1116/1.588363 Export Citation Characteristics of Delta-Doped InGaAs/GaAs Pseudomorphic Double-Quantum-Well High-Electron-Mobility Transistors Hsu RT, Kao MJ, Wang JS, Hsu WC Keywords:GAAS;FETS Please enable JavaScript to view the comments powered by Disqus.
