Previous Article Next Article Table of Contents Journal of Vacuum Science & Technology B, Vol.13, No.2, 293-296, 1995 DOI10.1116/1.588368 Export Citation Use of Ti in Ohmic Metal Contacts to P-GaAs Ren F, Abernathy CR, Pearton SJ, Lothian JR Keywords:MOLECULAR-BEAM EPITAXY;N-GAAS;CARBON;METALLIZATION;MICROSTRUCTURE;TRANSISTOR;STABILITY;TUNGSTEN Please enable JavaScript to view the comments powered by Disqus.
