Previous Article Next Article Table of Contents Journal of Vacuum Science & Technology B, Vol.13, No.2, 728-730, 1995 DOI10.1116/1.588147 Export Citation Effect of Si+ and Ge+ Ions on the Growth of Si1-xGex Films on Si(001) Using Potential-Enhanced Molecular-Beam Epitaxy Yun SJ, Lee SC, Lee JJ, Park SC Keywords:GAAS;NUCLEATION;GEXSI1-X Please enable JavaScript to view the comments powered by Disqus.
