Previous Article Next Article Table of Contents Journal of Vacuum Science & Technology B, Vol.13, No.2, 786-788, 1995 DOI10.1116/1.587888 Export Citation Ultrathin Nitride Layers Grown by Molecular-Beam Epitaxy and Their Effects on Interface States in Silicon Metal-Insulator-Semiconductor Field-Effect Transistors Fayfield RT, Chen J, Hagedorn MS, Higman TK, Moy AM, Cheng KY Keywords:CHEMICAL VAPOR-DEPOSITION;THERMAL NITRIDATION Please enable JavaScript to view the comments powered by Disqus.
