Previous Article Next Article Table of Contents Journal of Vacuum Science & Technology B, Vol.13, No.2, 792-795, 1995 DOI10.1116/1.587890 Export Citation Influence of Substrate Electrical Bias on the Growth of GaN in Plasma-Assisted Epitaxy Beresford R, Ohtani A, Stevens KS, Kinniburgh M Keywords:MOLECULAR-BEAM EPITAXY;SAPPHIRE Please enable JavaScript to view the comments powered by Disqus.
