Cathodic are ion implantation was used to make n(+)-p junction diodes and n-channel metaloxide-semiconductor (MOS) transistors. Antimony, with a dosage in the range of 6X10(14) to 4x10(15) ions/cm(2), was implanted as the n-type dopant into p-type [100] oriented silicon with a resistivity in the range of 2-5 Omega cm. The implantation voltage applied to the substrate was approximately -20 kV. Regular thermal oxidation and photolithography techniques were used in making the devices. The I-V characteristics of both diodes and transistors and the reverse breakdown of the n(+)-p junction were found to be comparable to the devices made by diffusion under similar conditions. The standard deviation of the sheet resistance of the implanted layer across a 3 in. wafer was found to be less than 4% of the average value. The implantation dosage and distribution characteristics were estimated by secondary ion mass spectrometry (SIMS) and Rutherford backscattering spectrometry (RES) measurements. The experimental results were found to agree with numerically calculated values. The ion charge state of the are plasma was extracted by comparing the experimental results and numerical results.