Journal of Vacuum Science & Technology B, Vol.13, No.5, 2049-2052, 1995
Growth of Very-Low Deep Impurity Density (N-T-Less-Than-5X10(11) cm(-3))InxGa1-Xp on GaAs by Metalorganic Chemical-Vapor-Deposition
InxGa1-xP layers lattice matched and lattice mismatched to GaAs substrates have been grown by metalorganic chemical vapor deposition (MOCVD). Deep level transient spectroscopy, double crystal x-ray diffraction, and current-voltage measurement were employed to characterize InxGa1-xP layers and InxGa1-xP/GaAs heterojunctions. We have observed a shallow electron trap located at E(C)-60 meV in InxGa1-xP layers with x<0.469, and a deep electron trap at E(C)-0.85 eV with x>0.532. However, no deep levels were detected in InxGa1-xP (0.469