Synchrotron radiation-excited etching of Si, SiC, and WO3 has been investigated using a noncontact mask with a pattern of submicrometer scale. The blank pattern of the mask was replicated on the etched surface, and highly area-selective etching was realized at the size of similar to 0.4 mu m. The spatial distribution of synchrotron radiation intensity on the sample determined the depth profile of the etched region of the sample. Some adsorbate which might be redeposited etching products appeared in the vicinity of the blank pattern of the mask.