Photocathode electron projection is an electron lithography technique that may be used to pattern semiconductors at the deep submicron level. Using a robust gold cathode, mask features in the range of 0.11-0.54 mu m have been transferred to electron resist coated wafers with adequate depth of focus (congruent to 5 mu m) and large field of view (congruent to 2 cm(2)). Low accelerating voltages similar to 3 keV minimize proximity effects, and with a mask to wafer spacing of a few millimeters, the necessary magnetic field is congruent to 0.45 T.