We present further results of a new fast method of simulating heating effects in e-beam lithography. The method suggested allows direct calculation of additional dose due to heating, and not only temperature distribution as in earlier articles. It predicts heating influence which exceeds the technological level beginning from 3-5 A/cm(2) for current density and 1-2 mu C/cm(2) for resist sensitivity (rather modest values for modern powerful e-beam machines). As the first step of heating correction we suggested and realized a procedure considering the internal effect only, which showed remarkable improvement and high efficiency.