In this article we present the preliminary results regarding the performance characterization of a metal-semiconductor-metal low-energy (less than or equal to 1 keV) electron detector fabricated by electron-beam lithography on metal-oxide chemical vapor deposition grown GaAs. These devices display very law dark currents, less than or equal to 3 nA at : 1 V and 300 nA at 9 V. Also, under electron-beam irradiation very high gain values (>1000) have been noted, which could be evidence of avalanche multiplicative effects. In addition, the input/output response of the device shows a high degree of linearity even in the high gain regime. The signal-to-noise response of the devices is well within the acceptable range of operation for low current sensitivity.