We explore the fabrication of complementary metal-oxide-semiconductor (CMOS) devices and circuits with a critical dimension of 100 nm and below using a variety of lithographic, processing. materials, and device design innovations. Device design parameters tailored for high performance al low operating power include the use of bulk and silicon-on-insulator substrates, a steep retrograde channel doping : scheme, ultrathin (similar to 3 nm) gate dielectric, shallow source, and drain extensions, and a metal-over-gate structure. Mix-and-match lithography, including the use of electron-beam lithography for all critical levels, x-ray lithography for gate level definition, and optical (deep ultraviolet) litography for noncritical levels, is used in an effort to exploit the strongest features of each of these lithography technologies. New reactive ion etching processes for CMOS gate definition as well as for device and circuit metallization have been developed in conjunction with the litographic processes in an effort to facilitate the scaling of silicon devices toward their ultimate limits.