Journal of Vacuum Science & Technology B, Vol.13, No.6, 2741-2744, 1995
Combining and Matching Optical, Electron-Beam, and X-Ray Lithographies in the Fabrication of Si Complementary Metal-Oxide-Semiconductor Circuits with 0.1 and Sub-0.1 Mu-M Features
Combining and matching optical, electron-beam, and x-ray lithographies in the fabrication of Si complementary metal-oxide-semiconductor circuits with 0.1 and sub-0.1 mu m features