In the last few years, we have made dramatic improvements in the key components of synchrotron radiation x-ray Lithography including a high-brightness and compact synchrotron radiation source, high-accuracy steppers, precise masks, and highly sensitive chemically amplified resists. These advances have been used in the test fabrication of complementary metal-oxide-semiconductor large scale integrated circuits using separation by implanted oxygen technology in the 0.2 mu m regime. Synchrotron radiation lithography was used at the active, gate, contact, and four-level metallization levels or at the gate level only Fabricated gate array large scale integrated circuits, including a 48X48 bit multiplier; have excellent and fully functional characteristics. This article describes lithographic performance under device fabrication conditions, demonstrating an excellent critical dimension control of 0.02 mu m (3 sigma), an overall overlay better than 0.15 mu m (3 sigma) (including metallization levels), and a throughput of 12 wafers (6 in.) per hour.