This paper will provide an industrial perspective comparing the semiconductor industry’s requirements for characterization of ultrashallow junctions versus the available methods for practical analysis. The continued shrinking of integrated circuit features, resulting in more complex functions per chip, place increased demands on the analytical laboratory. The challenge is to balance the need for timely customer response with leading edge analysis of the highest possible precision and accuracy. The technical trends, focusing primarily on the current and future analysis needs of silicon technology, will be discussed from both the customer’s and analyst’s point of view. The current tools for characterization of ultrashallow dopant profiles and the associated general nanotechnology will be described with emphasis on current measurement limitations and future analysis needs from a practical perspective. The gap between the semiconductor industry’s analysis needs and the actual information which can currently be provided on shallow junctions will be summarized.