The use of high-energy (>0.5 MeV) ion implantation potentially has distinct advantages for deep-submicron, ultralarge-scale integrated devices. Most reports on this technique focus on the formation and characterization of bulk properties at a depth of 1 mu m or greater. In contrast, studies of the surface properties of MeV implanted wafers are few. Those that exist depend on C-V or C-t structures and do not provide in situ, on-wafer measurements of surface properties such as surface charge and generation lifetime of minority carriers on the processed material. This is important since it is important to observe the relationship between dose, formation of buried layers, use of hydrogen denuding cycles, and defect gettering on the surface carrier properties at a common energy level. For this study we report on the application of optical surface/interface charge analysis by time resolved surface photovoltage to both quantify and qualify surface charge and the interface generation lifetime characteristics on MeV implanted surfaces.