This article presents a comparison of Cameca IMS 4f secondary ion-mass spectrometry (SIMS) measurements and resonant postionization mass spectrometry (RIMS) measurements of boron depth profiles in silicide/silicon samples (mainly CoSi2/Si). The emphasis of the comparison was on the shape of the profiles obtained with both techniques. For the SIMS data, we used a quantification procedure including a correction for sensitivity differences in both matrices. The RIMS sensitivity in CoSi2, TiSi2, and Si was explicitly compared using special test samples and shown to be identical to within 15%. Finally, we present preliminary results of the application of SIMS and RIMS to a number of CoSi2/Si samples with an unknown B profile. After application of the correction procedures, both techniques appear to produce nearly identical profile shapes in case of polycrystalline CoSi2 samples. For epitaxially grown crystalline CoSi2, however, differences sometimes remain, depending on the temperature of the second silicidation anneal used. Absolute quantification of the RIMS profiles could be achieved through the use of an internal implantation standard.