Boron and antimony deltalike doping spikes in Si and Si1-xGex layers with x = 0 to x = 0.25 deposited by molecular-beam epitaxy (MBE) have been investigated as candidates for p and n delta-doping MBE technology. They were characterized by high depth resolution secondary ion mass to spectrometry (SIMS) measurements using oxygen and cesium primary ion beams in the energy range from 2 to 12 keV and by high depth resolution spreading resistance measurements. Deltalike doping profiles with a full width at half-maximum of less than 2.7 and 3 nm have been measured by SIMS for Sb and B, respectively, with corresponding upward slopes of 0.4 and 1 nm. For Si1-xGex growth segregation effects, the electrical activity of B decreases with increasing Ge content, and the steepness of the B spikes increases. The behavior of B spikes during annealing is investigated.