In the last four years the two-dimensional spreading resistance profiling (2D-SRP) technique has been developed and improved such that it can be considered by now an accurate tool for junction delineation. As a consequence, the reliability of process simulators can be tested by comparing both 2D-SRP and, of course, 1D-SRP experimental results with relative simulations. In this work we apply the 1D- and 2D-SRP techniques to a power metal-oxide-semiconductor field effect transistor device structure to characterize the doped layers and to measure the channel length. A channel length of 0.95 mu m has been measured with an accuracy of 0.03 mu m. Attesting to the accuracy of the process simulation, by the use of the experimental results, has an importance which goes beyond the simple confirmation of the implemented modeling. The process simulation results are used as input for device simulation. Therefore, we further checked the reliability both of the measurements and the process simulations by comparing the experimental I-V curves of the characterized power metal-oxide-semiconductor structure with those obtained by the device simulations. This work shows that the use of 1D- and 2D-SRP measurements allows us to obtain accurate I-V curves going through process and device simulation.