Scanning resistance microscopy (SRM) is a scanning probe microscopy technique that performs localized contact resistance profiling over a semiconductor surface. Experimental results show that this technique can localize p-n junctions with a lateral spatial resolution of less than 35 nm. Here we present results from SRM imaging of a metal-oxide-semiconductor field-effect transistor and silicon on insulator cross sections. These results were obtained with a constant current SRM imaging technique. We also show that doped diamond tips can overcome some wear and resolution problems observed with metal tips.