The evaluation of the doping process requires the ability to measure accurate depth profiles. In this study, the accuracy of electrical measurement techniques is evaluated for the measurement of ultra-shallow dopant profiles. The methods investigated are spreading resistance profiling, electrochemical capacitance-voltage profiling, differential Hall effect profiling, tapered-groove profilometry, and a new method called microwave surface impedance profiling. The focus of this article is the comparative study of the different methods and an evaluation of the accuracy of the profiles. The study points out details of the measurements and analysis which are important in obtaining consistent and accurate measurements of ultra-shallow junctions.