Mercuric iodide HgI2 is a layered material consisting of alternating sequences of I-Hg-I atoms stacked along the c axis and bonded through van der Waals forces. The dynamics of surface structure modifications of a freshly cleaved crystal of alpha-HgI2 have been investigated by tapping mode atomic force microscopy. Layer-by-layer removal of HgI2 is observed and is attributed to the tapping tip interactions with the relatively soft mercuric iodide surface and also to the relatively high vapor pressure of HgI2. The step heights between the layers are found to be either 6 or 12 Angstrom corresponding to one or two layers of HgI4 tetrahedra. The effect of the tip modification is characterized by continuously scanning the same area for 1 h (41 scans) which produce craters similar to 120 nm in depth. Three consecutive scans separated by 1 h intervals and imaged in the same area with a minimized tapping force reveal the effects of evaporation and the intrinsic instability of this surface under ambient conditions. Comparison of the images collected with 1 h intervals between consecutive scans and the 41 consecutive scans with no delay allows for decoupling the evaporation and tip induced etching processes on the (001) surface of HgI2. Friction force images revealed two distinct areas with different friction on the (001) surface. The area of high friction was found to have an atomically resolved periodicity of 4.4 Angstrom which corresponds to the lattice spacing of the a or b planes. The areas of low friction exhibited a periodicity of 5.5 Angstrom and this spacing was attributed to a defect induced distortion of the a or b lattice constant.